hermetic infrared emitting diode op230 series general note tt electronics reserves the right to make change s in product speci?cation without notice or liability. all information is subject to tt electr onics own data and is considered accurate at time of going to print. issue b 07/2016 page 1 ? tt electronics plc optek technology, inc. 1645 wallace drive, carrollton, tx 75006|ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com descrip on: ? each device in this series is a gallium al uminum arsenide (gaa ias) infrared emi ng diode, mounted in a herme c metal to \ 46 housing. the gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. each op231 , op232 , OP233 , op234 and op235 device is lensed to provide a narrow beam angle (18) between half power points. the 890 nm wavelength closely matches the spectral response of silicon phototran sistors, while the narrow beam angle ? combined with the speci ed radiant intensity of the op231 series ? facilitates easy design in beam interrupt applica ons in conjunc on with the op800 or op598 series photosensors. the ? op231 ? series ? is ? mechanically ? and ? spectrally ? matched ? to ? op800, ? op593 ? and ? op598 ? phototransistors. each op231w , op232w , OP233w , op234w and op235w device is lensed to provide a wide beam angle (50) between half power points. the 890 nm wavelength closely matches the spectral response of silicon photo \ transistors, while the wide beam angle provides rela vely even illumina on over a large area. the ? op231w ? is ? mechanically ? and ? spectrally ? matched ? to ? the ? op800wsl ? and ? op830sl ? series ? devices. ? please ? refer ? to ? applica on ? bulle ns ? 208 ? and ? 210 ? for ? addi onal ? design ? informa on ? and ? reliability ? (degrada on) ? data. ? custom electrical, wire and cabling and connectors are available. contact your local representa ve or optek for more informa on . ? features: ?? focused and non \ focused op cal light pa ern ?? enhanced temperature range ?? to \ 46 herme cally sealed package ?? mechanically and spectrally matched to other optek devices ?? choice of power ranges ?? choice of narrow or wide irradiance pa ern applica ons: ? ?? non \ contact re ec ve object sensor ?? assembly line automa on ?? machine automa on ?? machine safety ?? end of travel sensor ?? door sensor ordering ? informa on ? ? part ? number ? ? led ? peak ? wavelength ?? output ? power ?? (mw/cm 2 ) ?? min ? / ? max ? ? total ? beam ? angle ? ? lead ? length ?? op231 ? 890 nm 1.5 / na 18 0.50" op232 ? 2.0 / 6.0 OP233 ? 3.0 / na op234 ? 850 nm 5.0 / na op235 ? 6.0 / na op231w ? 1.5 / na 50 op232w ? 3.5 / 7.0 OP233w ? 5.0 / na op234w ? 850 nm 5.0 / na op235w ? 6.0 / na 890 nm
general note tt electronics reserves the right to make change s in product speci?cation without notice or liability. all information is subject to tt electr onics own data and is considered accurate at time of going to print. hermetic infrared emitting diode op230 series issue b 07/2016 page 2 ? tt electronics plc optek technology, inc. 1645 wallace drive, carrollton, tx 75006|ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com op231, ? op232, ? OP233, ? op234, ? op235 ? op231w, ? op232w, ? OP233w, ? op234w, ? op235w ? inches [ millimeters ] dimensions ? are ? in: ? cathode anode inches ? [millimeters] dimensions ? are ? in: ? cathode anode pin ? # ? led ? 1 anode 2 cathode absolute ? maximum ? ratings ? (t a =25c unless otherwise noted) storage temperature range \ 65 o c to +150 o c operating temperature range \ 65 o c to +125 o c reverse voltage 2.0 a continuous forward current 100 ma peak forward current 10.0 a lead soldering temperature [1/16 inch (1.6 mm) fr om case for 5 seconds with soldering iron] 260 c (1)(2) power dissipation 200 mw (3)
general note tt electronics reserves the right to make change s in product speci?cation without notice or liability. all information is subject to tt electr onics own data and is considered accurate at time of going to print. hermetic infrared emitting diode op230 series issue b 07/2016 page 3 ? tt electronics plc optek technology, inc. 1645 wallace drive, carrollton, tx 75006|ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com notes: 1. rma ux is recommended. dura on can be extended to 10 seconds maximum when ow soldering. 2. derate linearly 2.0 mw/ c above 25 c. 3. measurement made with 100 s pulse measured at the tra iling edge of the pulse with a duty cycle of 0.1% and an i f = 100 ma. 4. for the op231 series, e e(apt) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 1.429? (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250? (6.35 mm) in di ameter forming a 10 cone. for the op231w series, e e(apt) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 0.466? (11.84 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250? (6.35 mm) in diameter forming a 10 cone. e e(apt) is not necessarily uniform within the measured area. electrical ? characteris cs ? (t a = 25c unless otherwise noted) symbol ? parameter ? min ? typ ? max ? units ? test ? conditions ? input ? diode apertured radiant incidence op231 op232 OP233 op234 op235 1.5 2.0 3.0 5.0 6.0 \ \ \ \ \ \ 6.0 \ \ \ mw/ cm 2 op231 series i f = 100 ma (3 )(4) aperture = 0.250? distance = 1.429? op231w op232w OP233w op234w op235w 1.5 3.5 5.0 5.0 6.0 \ \ \ \ \ \ 7.0 \ \ \ mw/ cm 2 op231w series i f = 100 ma (3 )(4) aperture = 0.250? distance = 0.466? p o radiant power output op231 op232 OP233 \ \ \ 6.0 8.0 10.0 \ \ \ mw i f = 100 ma (3 )(4) v f forward voltage \ \ 2.0 v i f = 100 ma (3) i r reverse current \ \ 100 a v r = 2.0 v p wavelength at peak emission op231, op232, OP233 op234, op235 \ \ 890 850 \ \ nm i f = 10 ma spectral bandwidth between half power points \ 80 \ nm i f = 10 ma ? p / ? t spectral shi with temperature \ +0.30 \ nm/c i f = constant hp emission angle at half power points op231 \ op235 op231w \ op231w \ \ 18 50 \ \ degree i f = 100 ma t r output rise time \ 500 \ ns i f(pk) =100 ma, pw=10 s, and d.c.=10.0% t f output fall time \ 250 \ ns e e(apta)
general note tt electronics reserves the right to make change s in product speci?cation without notice or liability. all information is subject to tt electr onics own data and is considered accurate at time of going to print. hermetic infrared emitting diode op230 series issue b 07/2016 page 4 ? tt electronics plc optek technology, inc. 1645 wallace drive, carrollton, tx 75006|ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com op231, ? op232, ? OP233 ? (including ? ?w? ? devices) ? forward voltage vs forward current vs temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 102030405060708090100 forward current (ma) typical forward voltage (v) -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120c optical power vs i f vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 102030405060708090100 forward current i f (ma) normalized optical power -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c normalized at 50 ma and 20 c relative radiant intensity vs. angular displacement 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -20 -15 -10 -5 0 5 10 15 20 angular displacement (degrees) relative radiant intensity distance vs output power vs forward current 0 1 2 3 4 5 6 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma 90 ma 100 ma normalized at 1" and 50 m a forward current
general note tt electronics reserves the right to make change s in product speci?cation without notice or liability. all information is subject to tt electr onics own data and is considered accurate at time of going to print. hermetic infrared emitting diode op230 series issue b 07/2016 page 5 ? tt electronics plc optek technology, inc. 1645 wallace drive, carrollton, tx 75006|ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com distance vs output power vs forward current 0.01 0.10 1.00 10.00 0.2 '' 0.7 '' 1.2 '' 1.7 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 80 ma 100 ma 120 ma normalized at 1.0" and 50 ma forward current relative radiant intensity vs angular displacement 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -80 -30 20 70 angular displacement (degrees) relative radiant intensity forward voltage vs forward current vs temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 50 forward current (ma) typical forward voltage (v) -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c optical power vs forward current vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 102030405060708090100 forward current i f (ma) relative output power -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c normalized at 50 ma and 20c op234, ? op234w ?
general note tt electronics reserves the right to make change s in product speci?cation without notice or liability. all information is subject to tt electr onics own data and is considered accurate at time of going to print. hermetic infrared emitting diode op230 series issue b 07/2016 page 6 ? tt electronics plc optek technology, inc. 1645 wallace drive, carrollton, tx 75006|ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com forward voltage vs forward current vs temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 50 forward current (ma) typical forward voltage (v) -60c -40c -20c 0c 20c 40c 60c 80c 100c 120c optical power vs forward current vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 102030405060708090100 forward current i f (ma) relative output power -60c -40c -20c 0c 20c 40c 60c 80c 100c 120c normalized at 50 ma and 20 c distance vs output power vs forward current 0 2 4 6 8 10 12 14 16 18 20 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 80 ma 100 ma 120 ma normalized at 1.0" and 50 ma forward current op235, ? op235w ?
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